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Ion-beam processes in group-III nitrides

Kucheyev, Sergei

Description

Group-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these devices, ion bombardment represents a very attractive technological tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this...[Show more]

dc.contributor.authorKucheyev, Sergei
dc.date.accessioned2008-11-09T23:32:53Z
dc.date.accessioned2011-01-04T02:39:16Z
dc.date.available2008-11-09T23:32:53Z
dc.date.available2011-01-04T02:39:16Z
dc.identifier.otherb25317106
dc.identifier.urihttp://hdl.handle.net/1885/47655
dc.description.abstractGroup-III-nitride semiconductors (GaN, InGaN, and AlGaN) are important for the fabrication of a range of optoelectronic devices (such as blue-green light emitting diodes, laser diodes, and UV detectors) as well as devices for high-temperature/high-power electronics. In the fabrication of these devices, ion bombardment represents a very attractive technological tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this thesis explores a number of fundamental aspects of radiation effects in wurtzite III-nitrides. Emphasis is given to an understanding of (i) the evolution of defect structures in III-nitrides during ion irradiation and (ii) the influence of ion bombardment on structural, mechanical, optical, and electrical properties of these materials. ¶ ... ¶ The work presented in this thesis has resulted in the identification and understanding of a number of both fundamental and technologically important ion-beam processes in III-nitrides. Most of the phenomena investigated are related to the nature and effects of implantation damage, such as lattice amorphization, formation of planar defects, preferential surface disordering, porosity, decomposition, and quenching of CL. These effects are often technologically undesirable, and the work of this thesis has indicated, in some cases, how such effects can be minimized or controlled. However, the thesis has also investigated one example where irradiation-produced defects can be successfully applied for a technological benefit, namely for electrical isolation of GaN-based devices. Finally, results of this thesis will clearly stimulate further research both to probe some of the mechanisms for unusual ion-induced effects and also to develop processes to avoid or repair unwanted lattice damage produced by ion bombardment.
dc.language.isoen
dc.rights.uriThe Australian National University
dc.subjectGaN
dc.subjectAlGaN
dc.subjectInGaN
dc.subjection implantation
dc.subjectimplantation damage
dc.subjectradiation defects
dc.subjectGroup-III-nitride semiconductors
dc.subjection bombardment
dc.subjection irradiation
dc.titleIon-beam processes in group-III nitrides
dc.typeThesis (PhD)
dcterms.valid2002
local.description.refereedyes
local.type.degreeDoctor of Philosophy (PhD)
dc.date.issued2002
local.contributor.affiliationThe Australian National University
local.contributor.affiliationDepartment of Electronic Materials Engineering, Research School of Physical Sciences and Engineering
local.identifier.doi10.25911/5d7a299a5f1d5
local.mintdoimint
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