Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors
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Schnohr, Claudia; Kluth, Patrick; Giulian, Raquel; Llewellyn, David; Byrne, Aidan; Cookson, D J; Ridgway, Mark C
Description
Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized,...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/34957 |
Source: | Physical Review B: Condensed Matter and Materials |
DOI: | 10.1103/PhysRevB.81.075201 |
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01_Schnohr_Swift-heavy-ion-induced_damage_2010.pdf | 629.12 kB | Adobe PDF |
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