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Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

Schnohr, Claudia; Kluth, Patrick; Giulian, Raquel; Llewellyn, David; Byrne, Aidan; Cookson, D J; Ridgway, Mark C

Description

Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized,...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/34957
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.81.075201

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