Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors
Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized,...[Show more]
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|Source:||Physical Review B: Condensed Matter and Materials|
|01_Schnohr_Swift-heavy-ion-induced_damage_2010.pdf||629.12 kB||Adobe PDF||Request a copy|
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