Skip navigation
Skip navigation

Ion-Dose-Dependent Microstructure in Amorphous Ge

Ridgway, Mark C; Glover, Christopher; Foran, Garry J; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A


Implantation-induced, microstructural modifications including increased bond length and non-Gaussian static disorder have been measured in amorphous Ge using extended x-ray absorption fine-structure spectroscopy. The evolution of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated...[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Physical Review B: Condensed Matter and Materials


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator