Implications of laser-doping parameters and contact opening size on contact resistivity
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Huyeng, Jonas; Ernst, Marco; Fong, Kean Chern; Walter, Daniel; Blakers, Andrew
Description
Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρC down to 70 μΩ cm2 and 30 μΩ cm2 for phosphorus and boron respectively, on a...[Show more]
Collections | ANU Research Publications |
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Date published: | 2018 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/313618 |
Source: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
DOI: | 10.1109/PVSC.2018.8547209 |
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Implications_of_laser-doping_parameters_and_contact_opening_size_on_contact_resistivity.pdf | 359.81 kB | Adobe PDF | Request a copy |
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