Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas
Aluminium oxide (AlOx) films have achieved excellent passivation on crystalline-silicon surfaces. Irrespective of the deposition method, an anneal is required to activate the passivation. In this work, the reaction kinetics of the annealing process for radiofrequency reactively-sputtered AlOx is investigated. The effectiveness of the activation anneal critically depend on the ambient gas. A gas mixture of N2 and H2 is found to be the best annealing ambient for sputtered Al2O3 films, leading to...[Show more]
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|Source:||ECS Solid State Letters|
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