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Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas

Zhang, Xinyu; Thomson, Andrew; Cuevas, Andres


Aluminium oxide (AlOx) films have achieved excellent passivation on crystalline-silicon surfaces. Irrespective of the deposition method, an anneal is required to activate the passivation. In this work, the reaction kinetics of the annealing process for radiofrequency reactively-sputtered AlOx is investigated. The effectiveness of the activation anneal critically depend on the ambient gas. A gas mixture of N2 and H2 is found to be the best annealing ambient for sputtered Al2O3 films, leading to...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: ECS Solid State Letters
DOI: 10.1149/2.0021412ssl


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