Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas
-
Altmetric Citations
Zhang, Xinyu; Thomson, Andrew; Cuevas, Andres
Description
Aluminium oxide (AlOx) films have achieved excellent passivation on crystalline-silicon surfaces. Irrespective of the deposition method, an anneal is required to activate the passivation. In this work, the reaction kinetics of the annealing process for radiofrequency reactively-sputtered AlOx is investigated. The effectiveness of the activation anneal critically depend on the ambient gas. A gas mixture of N2 and H2 is found to be the best annealing ambient for sputtered Al2O3 films, leading to...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2014 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/31176 |
Source: | ECS Solid State Letters |
DOI: | 10.1149/2.0021412ssl |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Zhang_Silicon_Surface_Passivation_by_2014.pdf | 442.58 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator