Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts
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Chen, Wenhao; Truong, Thien; Nguyen, Hieu; Samundsett, Christian; Phang, Pheng; Macdonald, Daniel; Cuevas, Andres; Zhou, Lang; Wan, Yimao; Yan, Di
Description
This paper describes the influence of plasma enhanced chemical vapor deposition (PECVD) deposition temperature on heavily doped silicon based (doped-Si/SiOx) passivating contacts for silicon solar cells. The doped-Si films are obtained by PECVD intrinsic amorphous silicon (a-Si) and a subsequent thermal POCl3 diffusion process. By changing the deposition temperature of PECVD, a-Si films with different degrees of crystallinity and density can be obtained. These differences between the a-Si films...[Show more]
Collections | ANU Research Publications |
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Date published: | 2020 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/311491 |
Source: | Solar Energy Materials and Solar Cells |
DOI: | 10.1016/j.solmat.2019.110348 |
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1-s2.0-S0927024819306749-main.pdf | 1.68 MB | Adobe PDF | Request a copy |
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