The Importance of Schottky Barrier Height in Plasmonically Enhanced Hot-Electron Devices
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Zhao, Shenyou; Yin, Yanting; Peng, Jun; Wu, Yiliang; Andersson, Gunther; Beck, Fiona
Description
Plasmonically enhanced hot-electron (PEH) photodiodes are a new class of optoelectronic device with the potential to be selective to spectral position, polarization, and bandwidth. Reported solid-state PEH devices based on metal nanoparticles generally have low performance, in part, due to low collection efficiency of photogenerated hot electrons. A correlation is found between the measured external quantum efficiency (EQE) and the temperature at which the ALD-TiO2 is deposited by atomic layer...[Show more]
Collections | ANU Research Publications |
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Date published: | 2020 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/311349 |
Source: | Advanced Optical Materials |
DOI: | 10.1002/adom.202001121 |
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Advanced Optical Materials - 2020 - Zhao - The Importance of Schottky Barrier Height in Plasmonically Enhanced Hot‐Electron.pdf | 2.26 MB | Adobe PDF | Request a copy |
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