Passivation of Phosphorus Diffused Black Multi-Crystalline Silicon by Hafnium Oxide
A key challenge for the success of the recent trend to adopt diamond wire sawing for multi‐crystalline silicon wafers is the texturing and passivation of their surfaces. The various so‐called “black silicon” texturing technologies show great promise in providing strong optical gains, but the nano‐scale surface structures resulted from dry etching are challenging to passivate with the conventional plasma enhanced chemical vapor deposition of silicon nitride. In this work, a single layer of...[Show more]
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|Source:||Physica Status Solidi: Rapid Research Letters|
|01_Cui_Passivation_of_Phosphorus_2017.pdf||2.4 MB||Adobe PDF||Request a copy|
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