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Conductive and Stable Magnesium Oxide Electron-Selective Contacts for Efficient Silicon Solar Cells

Wan, Yimao; Samundsett, Christian; Bullock, James; Hettick, Mark; Allen, Thomas; Yan, Di; Peng, Jun; Wu, Yiliang; Cui, Jie (Jason); Javey, Ali; Cuevas, Andres


A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n-type crystalline (c-Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi-level pinning effect and has hindered the development of n-type c-Si solar cells, while its p-type counterparts have been commercialized for several decades, typically utilizing aluminium alloys in full-area, and more recently, partial-area rear contact configurations. Here the authors demonstrate...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: Advanced Energy Materials
DOI: 10.1002/aenm.201601863


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