Growth and characterization of III-V compound semiconductor nanowires
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
|Collections||ANU Research Publications|
|Source:||16th Opto-Electronics and Communications Conference, OECC 2011|
|01_Gao_Growth_and_characterization_of_2011.pdf||127.38 kB||Adobe PDF||Request a copy|
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