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P-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Ullah, A. R.; Meyer, F.; Gluschke, J. G.; Naureen, Shagufta; Caroff, Philippe; Krogstrup, P.; Nygard, J.; Micolich, Adam Paul

Description

Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III–V complementary metal–oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal–semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal–GaAs interface. Our device beats the best-performing p-GaSb nanowire metal–oxide−semiconductor field effect transistor...[Show more]

CollectionsANU Research Publications
Date published: 2018-08-22
Type: Journal article
URI: http://hdl.handle.net/1885/229870
Source: Nano Letters
DOI: 10.1021/acs.nanolett.8b02249

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