P-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating
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Ullah, A. R.; Meyer, F.; Gluschke, J. G.; Naureen, Shagufta; Caroff, Philippe; Krogstrup, P.; Nygard, J.; Micolich, Adam Paul
Description
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III–V complementary metal–oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal–semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal–GaAs interface. Our device beats the best-performing p-GaSb nanowire metal–oxide−semiconductor field effect transistor...[Show more]
Collections | ANU Research Publications |
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Date published: | 2018-08-22 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/229870 |
Source: | Nano Letters |
DOI: | 10.1021/acs.nanolett.8b02249 |
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01_Ullah_P-GaAs_Nanowire_2018.pdf | 3.12 MB | Adobe PDF | Request a copy |
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