Silicon Ingot Characterization using Photoconductance Lifetime Techniques
Date
2019
Authors
Goodarzi, Mohsen
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Abstract
The main objective of this thesis is to evaluate the accuracy of minority carrier lifetime measurements in crystalline silicon ingots and blocks. Photoconductance lifetime measurement as a non-destructive contactless method has several advantages which make the method a well-established characterisation technique for silicon wafers. It is a fast and simple method to use for a broad range of carrier lifetimes as well as a broad range of injection levels. Despite the advantages of early-stage material characterizations, the application of photoconductance lifetime measurement methods to silicon ingots and blocks is not yet as widespread.
Immediate feedback about specific impurities and crystal defects in the ingots and blocks can result in the optimization of the crystal growth process. It also helps to make more reliable decisions for cropping ingots and blocks prior to wafering. In the PV industry, in particular, it may also be possible to sort the wafers at the start of processing and tune the cell process for different quality wafers coming from the different sections of the block. This detailed information can potentially be used during the manufacturing processes to achieve higher efficiency as well as higher yield.
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Thesis (PhD)
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DOI
10.25911/5d84aaf80092b