Silicon Ingot Characterization using Photoconductance Lifetime Techniques
The main objective of this thesis is to evaluate the accuracy of minority carrier lifetime measurements in crystalline silicon ingots and blocks. Photoconductance lifetime measurement as a non-destructive contactless method has several advantages which make the method a well-established characterisation technique for silicon wafers. It is a fast and simple method to use for a broad range of carrier lifetimes as well as a broad range of injection levels. Despite the advantages of early-stage...[Show more]
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