Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires
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Jiang, Nian; Parkinson, Patrick; Gao, Qiang; Breuer, Steffan; Wong-Leung, Jennifer; Jagadish, Chennupati; Tan, Hark Hoe
Description
GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with optimized AlxGa1xAs shell and twin-free Au-catalyzed GaAs cores. Time-resolved photoluminescence measurements were carried out on single nanowires at room temperature, revealing minority carrier lifetimes of 1.02 6 0.43 ns, comparable to self-assisted nanowires grown by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to improvement of the GaAs/AlxGa1xAs interface...[Show more]
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15589 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4735002 |
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01_Jiang_Long_minority_carrier_lifetime_2012.pdf | Published Version | 686 kB | Adobe PDF |
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