Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires
GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with optimized AlxGa1xAs shell and twin-free Au-catalyzed GaAs cores. Time-resolved photoluminescence measurements were carried out on single nanowires at room temperature, revealing minority carrier lifetimes of 1.02 6 0.43 ns, comparable to self-assisted nanowires grown by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to improvement of the GaAs/AlxGa1xAs interface...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jiang_Long_minority_carrier_lifetime_2012.pdf||Published Version||686 kB||Adobe PDF|
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