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Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

Jiang, Nian; Parkinson, Patrick; Gao, Qiang; Breuer, Steffan; Tan, Hoe Hark; Wong-Leung, Yin Yin (Jennifer); Jagadish, Chennupati


GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with optimized AlxGa1xAs shell and twin-free Au-catalyzed GaAs cores. Time-resolved photoluminescence measurements were carried out on single nanowires at room temperature, revealing minority carrier lifetimes of 1.02 6 0.43 ns, comparable to self-assisted nanowires grown by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to improvement of the GaAs/AlxGa1xAs interface...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4735002


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