Jiang, Nian; Parkinson, Patrick; Gao, Qiang; Breuer, Steffan; Wong-Leung, Yin Yin (Jennifer); Jagadish, Chennupati; Tan, Hark Hoe
GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition
with optimized AlxGa1xAs shell and twin-free Au-catalyzed GaAs cores. Time-resolved
photoluminescence measurements were carried out on single nanowires at room temperature,
revealing minority carrier lifetimes of 1.02 6 0.43 ns, comparable to self-assisted nanowires grown
by molecular beam epitaxy. The long minority carrier lifetimes are mainly attributed to
improvement of the GaAs/AlxGa1xAs interface...[Show more]
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