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III-V Compound Semiconductor Nanowire Terahertz Detectors

Peng, Kun

Description

III-V semiconductor nanowires have emerged over the past decade as promising nano-components for future electronic and optoelectronic devices and systems, including field-effect transistors, light-emitting diodes, photodetectors, lasers and solar cells. Recently, III-V semiconductor nanowires have been considered as ideal candidates for photoconductive terahertz (THz) detection, as they possess many desirable properties, such as a direct and tunable band gap,...[Show more]

CollectionsOpen Access Theses
Date published: 2016
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/117040
DOI: 10.25911/5d723d352df90

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