Peng, Kun
Description
III-V semiconductor nanowires have emerged over the past decade
as promising nano-components for future electronic and
optoelectronic devices and systems, including field-effect
transistors, light-emitting diodes, photodetectors, lasers and
solar cells. Recently, III-V semiconductor nanowires have been
considered as ideal candidates for photoconductive terahertz
(THz) detection, as they possess many desirable properties, such
as a direct and tunable band gap,...[Show more] good carrier mobility and short
carrier lifetime (on the picosecond to nanosecond timescale). Due
to the one-dimensional structure and nanoscale size, such III-V
nanowire THz detectors are promising as building blocks for
advanced THz systems with compact configuration and enhanced
functionalities (i.e. sub-wavelength resolution and high
polarisation sensitivity).
This dissertation presents the first attempt to examine the
suitability of III-V semiconductor nanowires for their
applications as photoconductive THz detectors. At first, a series
of GaAs/AlGaAs core-shell nanowires were grown (using Au-catalyst
metalorganic vapour phase epitaxy technique), characterised and
compared for selection to detect the THz signal in a THz
time-domain spectroscopy (THz-TDS) system. The fabricated
GaAs/AlGaAs single nanowire THz detectors exhibited a pA-level
THz response with good signal-to-noise ratio and high
polarisation sensitivity however a narrow detection bandwidth (in
the range of 0.1-0.6 THz). The origin of the narrow bandwidth for
single nanowire detectors was thoroughly investigated using
finite-difference time-domain (FDTD) simulations, revealing that
the limited bandwidth arose from the strong low frequency
resonance caused by the specific device geometry design (rather
than the nanowire itself). By adjusting and optimising the
nanowire detector geometry, broadband (0.1-1.6 THz) GaAs/AlGaAs
single nanowire THz detectors were demonstrated. Furthermore, due
to the nanoscale active material fabricated on an insulating
substrate (z-cut quartz), single nanowire photoconductive THz
detectors showed a very low dark current and a resultant
low-noise nature when compared with the traditional (bulk)
photoconductive THz detectors. This relaxes the ultra-short
carrier lifetime requirement for the (semiconductor) detection
material for photoconductive THz detection, since in traditional
photoconductive detector the detection material has to have a
carrier lifetime of a few picoseconds to minimise the noise
current. Therefore, nanowires with longer carrier lifetime can
also be used for photoconductive THz detection. Based on above
findings, the high-quality core-only InP nanowires (grown by
selective-area metalorganic vapour phase epitaxy technique) were
investigated for photoconductive THz detection. With previously
optimised device geometry and superior optoelectronic properties
of InP nanowires, InP single nanowire THz detectors were
fabricated and found to exhibit a broadband response (0.1-2.0
THz) and excellent sensitivity, which were then used to measure
the transmission spectra for real material characterisation with
performance comparable to the traditional (bulk) detectors. A
longer time-domain sampling window (compared to the traditional
bulk detectors) and thus a higher spectral response resolution
were obtained for the InP single nanowire THz detectors, which
have been ascribed to the small active material volume and thick
THz-transparent z-cut quartz substrate, enabling the single
nanowire detector to have less Fabry-Pérot reflections in
measured signal. Furthermore, it was found that the contact
quality significantly affects THz detector performance and is
particularly crucial for the performance and reliability of
single nanowire detectors due to their large surface-to-volume
ratio. In the final part of this work, an axial n+-i-n+ InP
nanowire structure was designed and investigated for use in
nanowire THz detectors. The improved contact quality (due to
contact doping) has led to further improvement of the nanowire
THz detector performance particularly in its signal-to-noise
ratio.
In summary, this thesis demonstrates a series of
photoconductive THz detectors fabricated from different III-V
semiconductor nanowire materials and structures, showing
excellent bandwidth and sensitivity, approaching that of the
conventional THz detectors. The nanowire device design,
fabrication, characterisation and related optical simulations
described in this work have provided deep insights into the
characteristics of the single nanowire THz detectors, which may
serve as a useful guidance for future development of nano-device
based THz systems.
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