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Ti/Ni/Au contacts to n-SiC after low energy implantation

Leech, Patrick W; Holland, A S; Reeves, G K; Pan, Yue; Ridgway, Mark C; Tanner, Phillip


The effect of lowenergy implantation of Por Cionsin 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two- ontact circularte ststructure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was1.29 x 10 x 6 Ω cm2. The value of ρc increased significantly at an implant dose of1 x 1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Materials Letters
DOI: 10.1016/j.matlet.2015.12.036


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