Ti/Ni/Au contacts to n-SiC after low energy implantation
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Leech, Patrick W; Holland, A S; Reeves, G K; Pan, Yue; Ridgway, Mark C; Tanner, Phillip
Description
The effect of lowenergy implantation of Por Cionsin 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two- ontact circularte ststructure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was1.29 x 10 x 6 Ω cm2. The value of ρc increased significantly at an implant dose of1 x 1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured...[Show more]
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2016 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/103502 |
| Source: | Materials Letters |
| DOI: | 10.1016/j.matlet.2015.12.036 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Leech_Ti%2FNi%2FAu_contacts_to_n-SiC_2016.pdf | 470.28 kB | Adobe PDF | Request a copy |
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