Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films
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Yan, Kunlun; Wang, Rongping; Vu, Khu; Madden, Steve; Belay, Kidane; Elliman, Robert; Luther-Davies, Barry
Description
We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for...[Show more]
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2012 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/102829 |
| Source: | Optical Materials Express |
| DOI: | 10.1364/OME.2.001270 |
| Access Rights: | Open Access |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Yan_Photoluminescence_in_Er-doped_2012.pdf | 1.35 MB | Adobe PDF |
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