Skip navigation
Skip navigation

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Yan, Kunlun; Wang, Rongping; Vu, Khu; Madden, Steve; Belay, Kidane; Elliman, Robert; Luther-Davies, Barry

Description

We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/102829
Source: Optical Materials Express
DOI: 10.1364/OME.2.001270

Download

File Description SizeFormat Image
01_Yan_Photoluminescence_in_Er-doped_2012.pdf1.35 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator