Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films
We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for...[Show more]
|Collections||ANU Research Publications|
|Source:||Optical Materials Express|
|01_Yan_Photoluminescence_in_Er-doped_2012.pdf||1.35 MB||Adobe PDF||Request a copy|
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