A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples
Plan-view and cross-sectional transmission electron microscopy have been used for a detailed study of the defects formed in capped InAs/GaAs quantum dot (QD) samples. Three main types of defects, V-shaped defects, single stacking faults, and stacking fault pyramids, were found to form under growth conditions that led to either very large, indium enriched, or coalesced islands. All three types of defects originate at the buried quantum dot layer and then travel through the GaAs cap to the...[Show more]
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|Source:||Journal of Applied Physics|
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