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A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples

Stewart Sears, Kalista; Wong-Leung, Yin-Yin; Jagadish, Chennupati; Tan, Hark Hoe

Description

Plan-view and cross-sectional transmission electron microscopy have been used for a detailed study of the defects formed in capped InAs/GaAs quantum dot (QD) samples. Three main types of defects, V-shaped defects, single stacking faults, and stacking fault pyramids, were found to form under growth conditions that led to either very large, indium enriched, or coalesced islands. All three types of defects originate at the buried quantum dot layer and then travel through the GaAs cap to the...[Show more]

CollectionsANU Research Publications
Date published: 2006-06-01
Type: Journal article
URI: http://hdl.handle.net/10440/1029
http://digitalcollections.anu.edu.au/handle/10440/1029
Source: Journal of Applied Physics
DOI: 10.1063/1.2197038

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