Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
Accumulation of structural disorder in Si bombarded at −196 °C with 0.5 MeV ²⁰⁹Bi₁ and 1 MeV ²⁰⁹Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that the damage buildup is sigmodal even for such heavy-ion bombardment at liquid nitrogen temperature. This strongly suggests that, for the implant conditions of this study, the buildup of lattice damage cannot be considered as an accumulation of completely disordered regions....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Titov_Damage_buildup_in_Si_under_2001.pdf||513.57 kB||Adobe PDF|
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