Skip navigation
Skip navigation

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

Titov, A. I.; Kucheyev, S. O.; Belyakov, V. S.; Azarov, A. Yu.


Accumulation of structural disorder in Si bombarded at −196 °C with 0.5 MeV ²⁰⁹Bi₁ and 1 MeV ²⁰⁹Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that the damage buildup is sigmodal even for such heavy-ion bombardment at liquid nitrogen temperature. This strongly suggests that, for the implant conditions of this study, the buildup of lattice damage cannot be considered as an accumulation of completely disordered regions....[Show more]

CollectionsANU Research Publications
Date published: 2001-10-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1404426


File Description SizeFormat Image
01_Titov_Damage_buildup_in_Si_under_2001.pdf513.57 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator