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Browsing by Author Gao, Q.

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Showing results 1 to 15 of 15
01_Bozanic_Characterization_of_molecular_2008.pdf.jpg

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Author(s)Bozanic, A.; Majlinger, Z.; Petravic, M., et al
TypeJournal article
Date Published9-Jun-2008
Date Created-
01_Fickenscher_Direct_imaging_of_the_spatial_2011.pdf.jpg

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

Author(s)Fickenscher, M. A.; Jackson, H. E.; Smith, L. M., et al
TypeJournal article
Date Published29-Dec-2011
Date Created-
01_Xu_Effects_of_annealing_and_2009.pdf.jpg

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Author(s)Xu, H. Y.; Guo, Y. N.; Wang, Y., et al
TypeJournal article
Date Published23-Oct-2009
Date Created-
01_Gao_Enhanced_optical_properties_of_2004.pdf.jpg

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Author(s)Gao, Q.; Jagadish, C.; Sun, B. Q., et al
TypeJournal article
Date Published5-Apr-2004
Date Created-
01_Sun_Epitaxially_grown_GaAsN_random_2003.pdf.jpg

Epitaxially grown GaAsN random laser

Author(s)Sun, B. Q.; Gal, M.; Gao, Q., et al
TypeJournal article
Date Published15-May-2003
Date Created-
01_Paladugu_Evolution_of_InAs_branches_in_2007.pdf.jpg

Evolution of InAs branches in InAs/GaAs nanowire heterostructures

Author(s)Paladugu, Mohanchand; Zou, J.; Auchterlonie, G. J., et al
TypeJournal article
Date Published28-Sep-2007
Date Created-
01_Paladugu_Evolution_of_InAs_branches_in_2007.pdf.jpg

Evolution of InAs branches in InAs/GaAs nanowire heterostructures

Author(s)Paladugu, Mohanchand; Zou, J.; Auchterlonie, G. J., et al
TypeJournal article
Date Published28-Sep-2007
Date Created-
01_Deenapanray_Implant_isolation_of_Zn-doped_2003.pdf.jpg

Implant isolation of Zn-doped GaAs epilayers: effects of ion species, doping concentration, and implantation temperature

Author(s)Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C.
TypeJournal article
Date Published1-Jun-2003
Date Created-
01_Gao_Implantation-induced_2003.pdf.jpg

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Author(s)Gao, Q.; Deenapanray, P. N. K.; Jagadish, C., et al
TypeJournal article
Date Published20-Oct-2003
Date Created-
01_Perera_Nearly_intrinsic_exciton_2008.pdf.jpg

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures

Author(s)Perera, S.; Fickenscher, M. A.; Jackson, H. E., et al
TypeJournal article
Date Published6-Aug-2008
Date Created-
01_Sun_On_the_nature_of_radiative_2002.pdf.jpg

On the nature of radiative recombination in GaAsN

Author(s)Sun, B. Q.; Gal, M.; Gao, Q., et al
TypeJournal article
Date Published2-Dec-2002
Date Created-
01_Little_Phase-stepping_interferometry_2013.pdf.jpg

Phase-stepping interferometry of GaAs nanowires: determining nano-wire radius

Author(s)Little, D. J.; Kuruwita, R. L.; Joyce, A., et al
TypeJournal article
Date Published15-Oct-2013
Date Created-
01_Mishra_Polarization_and_temperature_2007.pdf.jpg

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

Author(s)Mishra, A.; Titova, L. V.; Hoang, T. B., et al
TypeJournal article
Date Published26-Dec-2007
Date Created-
01_Maharjan_Room_temperature_photocurrent_2009.pdf.jpg

Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires

Author(s)Maharjan, A.; Pemasiri, K.; Kumar, P., et al
TypeJournal article
Date Published15-May-2009
Date Created-
01_Guo_Structural_characteristics_of_2006.pdf.jpg

Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Author(s)Guo, Y. N.; Zou, J.; Paladugu, Mohanchand, et al
TypeJournal article
Date Published6-Dec-2006
Date Created-
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