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Browsing by Author Fu, Lan

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Showing results 1 to 20 of 123

A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications

Author(s)Li, Ziyuan; Hattori, Haroldo; Parkinson, Patrick, et al
TypeJournal article
Date Published2012
Date Created-
01_Jolley_A_study_of_quantum_well_solar_2013.pdf.jpg

A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination

Author(s)Jolley, G.; Faraone, L.; Fu, Lan, et al
TypeJournal article
Date Published29-May-2013
Date Created-
Castro-Camus_Ion2007.pdf.jpg

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy

Author(s)Castro-Camus, E; Lloyd-Hughes, J; Fu, Lan, et al
TypeJournal article
Date Published24-May-2007
Date Created-

Analysis of multi-wavelength photonic crystal single-defect laser arrays

Author(s)Liu, Danyu; Hattori, Haroldo; Fu, Lan, et al
TypeConference paper
Date Published2010
Date CreatedNovember 7-11 2010
Buda_Analytical2008.pdf.jpg

Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization

Author(s)Buda, Manuela; Iordache, G; Mokkapati, Sudha, et al
TypeJournal article
Date Published30-Jul-2008
Date Created-

Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation

Author(s)Huang, Shao-Hua; Chen, Zhanghai H; Wang, Feng, et al
TypeJournal article
Date Published2006
Date Created-

Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO 2 Ceramics: Compositional Gradient and Local Structure

Author(s)Hu, Wanbiao; Lau, Taim Soon (Kenny); Liu, Yun, et al
TypeJournal article
Date Published2015
Date Created-

Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells

Author(s)Du, Si; Fu, Lan; Jagadish, Chennupati, et al
TypeConference paper
Date Published2008
Date CreatedFebruary 25-29 2008

Compound semiconductor nanowires for optoelectronic devices

Author(s)Gao, Qiang; Jiang, Nian; Joyce, Hannah J, et al
TypeConference paper
Date Published2013
Date CreatedJune 30-July 4 2013

Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings

Author(s)Liu, Danyu; Hattori, Haroldo; Fu, Lan, et al
TypeJournal article
Date Published2009
Date Created-

Coupling of light from microdisk lasters to nano-antennas with nano-tapers

Author(s)Li, Ziyuan; Hattori, Haroldo; Karouta, Fouad, et al
TypeConference paper
Date Published2012
Date CreatedSeptember 8-12 2012

Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells

Author(s)Turner, Samuel (Sam); Mokkapati, Sudha; Jolley, Greg, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Disordering of quantum structures for optoelectronic device integration

Author(s)Fu, Lan; Mokkapati, Sudha; Barik, Satyanarayan, et al
TypeBook chapter
Date Published2011
Date Created-
01_Drozdowicz-Tomsia_Doping_effect_on_dark_currents_2006.pdf.jpg

Doping effect on dark currents in In₀.₅Ga₀.₅As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Author(s)Drozdowicz-Tomsia, K.; Goldys, E. M.; Fu, Lan, et al
TypeJournal article
Date Published15-Sep-2006
Date Created-
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, Greg; Xiao, B; Fu, Lan, et al
TypeJournal article
Date Published2009
Date Created-

Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2008
Date Created-
01_Fu_Effects_of_rapid_thermal_2006.pdf.jpg

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Author(s)Fu, Lan; McKerracher, I.; Wong-Leung, J., et al
TypeJournal article
Date Published13-Jun-2006
Date Created-

Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

Author(s)Gao, Qiang; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2004
Date Created-
01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-

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