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Browsing by Author Boudinov, H

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Showing results 1 to 8 of 8

Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi

Author(s)Moyses Araujo, C; Souza de Almeida, J; Pepe, I, et al
TypeJournal article
Date Published2000
Date Created-
Boudinov_Characterization2003.pdf.jpg

Characterization of deep level traps responsible for isolation of proton implanted GaAs

Author(s)Boudinov, H; Coelho, A V P; Jagadish, Chennupati, et al
TypeJournal article
Date Published15-Mar-2003
Date Created-

Damage Accumulation in Si Crystal During Ion Implantation at Elevated Temperatures: Evidence of Chemical Effects

Author(s)de Souza, J P; Suprun-Belevich, Y; Boudinov, H, et al
TypeJournal article
Date Published2000
Date Created-

Electrical Isolation of Al x Ga 1-x As by Ion Irradiation

Author(s)Lippen, T V; Boudinov, H; Jagadish, Chennupati, et al
TypeJournal article
Date Published2002
Date Created-

Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability

Author(s)Boudinov, H; de Souza, J P; Jagadish, Chennupati
TypeJournal article
Date Published2001
Date Created-

Implant Isolation of AlGaAs Multilayer DBR

Author(s)Coelho, A V P; Boudinov, H; Lippen, T V, et al
TypeJournal article
Date Published2004
Date Created-

Strain Development and Damage Accumulation During Neon Ion Implantation into Silicon at Elevated Temperatures

Author(s)Cima, C; Boudinov, H; de Souza, J P, et al
TypeJournal article
Date Published2000
Date Created-

Variable Temperature Hall-effect Measurements in Ion Bombarded InP

Author(s)Presenti, G C; Boudinov, H; Carmody, C, et al
TypeJournal article
Date Published2004
Date Created-
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