Skip navigation
Skip navigation

Browsing by Author MacDonald, Daniel

0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Or enter first few letters:  
Showing results 90 to 109 of 137

Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Author(s)Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel, et al
TypeConference paper
Date Published2014
Date CreatedJune 8-13 2014

Photoluminescence imaging for net doping measurements of surface limited silicon wafers

Author(s)Lim, Siew Yee; Forster, Maxime; Zhang, Xinyu, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012

Photoluminescence imaging of silicon bricks

Author(s)Mitchell, Bernhard; Weber, Jurgen; Juhl, Mattias, et al
TypeConference paper
Date Published2014
Date CreatedSeptember 22-27 2013

Plasma-Enhanced Chemical Vapour Deposition of a-Si:H to Provide Surface Passivation of c-Si Surfaces at Low Temperature

Author(s)Mitchell, Jonathon; MacDonald, Daniel; Cuevas, Andres
TypeConference paper
Date Published2007
Date CreatedSeptember 3-7 2007

Precipitation of interstitial iron in multicrystalline silicon

Author(s)Liu, An Yao; MacDonald, Daniel
TypeJournal article
Date Published2014
Date Created-

Precipitation of iron in multicrystalline silicon during annealing

Author(s)Liu, An Yao; MacDonald, Daniel
TypeJournal article
Date Published2014
Date Created-

PROGRESS WITH LUMINESCENCE IMAGING FOR THE CHARACTERISATION OF SILICON WAFERS AND SOLAR CELLS

Author(s)Trupke, Thorsten; Bardos, R A; Abbott, M D, et al
TypeConference paper
Date Published2007
Date CreatedSeptember 3-7 2007

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Author(s)Sio, Hang Cheong (Kelvin); Trupke, T; MacDonald, Daniel
TypeJournal article
Date Published2014
Date Created-

Quantitative analysis of grain boundary recombination in multi-crystalline silicon wafers

Author(s)Burgers, A.R.; Geerligs, Lambert Johan; MacDonald, Daniel, et al
TypeConference paper
Date Published2007
Date CreatedDecember 3-7 2007
Fell A et al Quantitative surface recombination 2014.pdf.jpg

Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling

Author(s)Fell, Andreas; Walter, Daniel; Yang, Xinbo, et al
TypeJournal article
Date Published2014
Date CreatedMarch 25-27 2014

Reactive ion etching of dielectrics and silicon for photovoltaics

Author(s)Deenapanray, Prakash; Athukorala, Chintana; MacDonald, Daniel, et al
TypeJournal article
Date Published2006
Date Created-

Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon

Author(s)Rougieux, Fiacre; Forster, Maxime; MacDonald, Daniel, et al
TypeJournal article
Date Published2011
Date Created-

Recombination activity of iron-boron pairs in compensated p-type silicon

Author(s)MacDonald, Daniel; Liu, An Yao
TypeJournal article
Date Published2010
Date Created-

Recombination activity of manganese in p- and n-type crystalline silicon

Author(s)MacDonald, Daniel; Rosenits, Philipp; Deenapanray, Prakash
TypeJournal article
Date Published2007
Date Created-

Recombination in n- and p- type silicon emitters contaminated with iron

Author(s)MacDonald, Daniel; Mackel, Helmut; Cuevas, Andres
TypeConference paper
Date Published2006
Date CreatedMay 8-12 2006

Recombination parameters of iron-boron pairs in boron doped crystalline silicon

Author(s)Birkholz, Jens E; Bothe, Karsten; MacDonald, Daniel, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

Reduced Fill Factors in Multicrystalline Silicon Solar Cells Due To Injection-level Dependant Bulk Recombination Lifetimes

Author(s)MacDonald, Daniel; Cuevas, Andres
TypeJournal article
Date Published2000
Date Created-

Reduced Recombination Activity of Nickel Precipitates: Another Advantage of n-type Silicon

Author(s)MacDonald, Daniel; Cuevas, Andres
TypeConference paper
Date Published2005
Date CreatedOctober 10 2005

Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots

Author(s)MacDonald, Daniel; Cuevas, Andres; Ferrazza, Francesca
TypeJournal article
Date Published1999
Date Created-

Robust Excitons and Trions in Monolayer MoTe2

Author(s)Yang, Jiong; Lu, Tieyu; Win Myint, Ye, et al
TypeJournal article
Date Published2015
Date Created-

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator