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Showing results 23 to 42 of 118
01_Jolley_Growth_and_confinement_effects_2011.pdf.jpg

Growth and confinement effects in III-V semiconductor nanostructures

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeConference paper
Date Published2011
Date CreatedOctober 30-November 2 2011

High efficiency coupling of light from photonic wire lasers into nano-antennas

Author(s)Li, Ziyuan; Hattori, Haroldo; Fu, Lan, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

III-V nanowires for optoelectronic applications

Author(s)Jiang, Nian; Lee, Yu-Heng (Jaret); Saxena, Dhruv, et al
TypeConference paper
Date Published2012
Date CreatedDecember 17-19 2012

Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

Author(s)Lee, Yu-Heng (Jaret); Li, Zhe; Fu, Lan, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Improved performance of GaAs-based terahertz emitters

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 5-10 2010

Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick Wallace, et al
TypeJournal article
Date Published2011
Date Created-

Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping

Author(s)Lu, Hao Feng; Fu, Lan; Jolley, Greg, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes

Author(s)Buda, Manuela; Fu, Lan; Josyula, L, et al
TypeConference paper
Date Published2003
Date CreatedDecember 11 2002

Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

Author(s)Buda, Manuela; Fu, Lan; Josyula, L, et al
TypeJournal article
Date Published2003
Date Created-

Impurity Free Intermixing for Optoelectronic Device Integration

Author(s)Buda, Manuela; Fu, Lan; Hay, J, et al
TypeConference paper
Date Published2002
Date CreatedMay 12 2002
01_Deenapanray_Impurity-free_disordering_2002.pdf.jpg

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Author(s)Deenapanray, Prakash N. K; Gong, Bin; Lamb, R. N, et al
TypeJournal article
Date Published10-Jun-2002
Date Created-
01_Barik_Impurity-free_disordering_of_2007.pdf.jpg

Impurity-free disordering of InAs/InP quantum dots

Author(s)Barik, S; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published15-Jun-2007
Date Created-

Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering

Author(s)McKerracher, Ian; Fu, Lan; Jagadish, Chennupati, et al
TypeConference paper
Date Published2008
Date CreatedAugust 13-14 2008

In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

Author(s)Fu, Lan; Lever McGowan, Penelope; Stewart Sears, Kalista, et al
TypeJournal article
Date Published2005
Date Created-

Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures

Author(s)Liu, Danyu; Hattori, Haroldo; Fu, Lan, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010
01_Liu_Increasing_the_coupling_2010.pdf.jpg

Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures

Author(s)Liu, Danyu; Hattori, Haroldo T.; Fu, Lan, et al
TypeJournal article
Date Published23-Feb-2010
Date Created-

Influence of Electrical Design on Core - Shell GaAs Nanowire Array Solar Cells

Author(s)Li, Zhe; Wenas, Yesaya; Fu, Lan, et al
TypeJournal article
Date Published2015
Date Created-

Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing

Author(s)Deenapanray, Prakash; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2000
Date Created-
01_Jolley_Influence_of_quantum_well_and_2007.pdf.jpg

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published25-Oct-2007
Date Created-

Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures

Author(s)Gareso, P; Buda, Manuela; Fu, Lan, et al
TypeJournal article
Date Published2007
Date Created-

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