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01_Alkhaldi_The_influence_of_capping_2016.pdf.jpg

The influence of capping layers on pore formation in Ge during ion implantation

Author(s)Alkhaldi, Huda; Tran, Tuan; Kremer, Felipe, et al
TypeJournal article
Date Published2016
Date Created-

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator