Decoster, StefanGlover, C JJohannessen, BGiulian, RSprouster, DavidKluth, PatrickAraujo, L LHussain, ZohairSchnohr, ClaudiaSalama, HazarKremer, FelipeTemst, K.Vantomme, ARidgway, Mark C2015-12-130909-0495http://hdl.handle.net/1885/72527Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micKeywords: EXAFS; Experimental techniques; Extended X-ray absorption fine structure measurements; lift-off; Lift-off procedures; Sample preparation methods; Sample preparation procedure; Small angle X-ray scattering; Amorphous semiconductors; Dielectric materials; E dielectric; EXAFS; lift-off; semiconductor; thin film201310.1107/S09090495130050492016-02-24