Bullock, JamesCuevas, AndresAllen, ThomasBattaglia, Corsin2015-10-282015-10-280003-6951http://hdl.handle.net/1885/16134This letter examines the application of transparent MoOₓ (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoOₓ based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J oc and the contact resistivity ρ c. Contacts made to p-type wafers and p⁺ diffused regions achieve optimum ρ c values of 1 and 0.2 mΩ·cm², respectively, and both result in a Joc of ∼200 fA/cm². These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoOₓ contacts made to n-type silicon result in higher Joc and ρc with optimum values of ∼300 fA/cm² and 30 mΩ·cm² but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.This project was partially funded by The Australian Renewable Energy Agency.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 28/10/15). Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.49034672014-12-0910.1063/1.49034672015-12-11