Basnet, RabinWinter, ClemensBein, NicoleHeilig, Matthiassiebke, FrankVescavo, GiulianoMacDonald, Daniel2026-06-212026-06-21WOS:001747642400015ORCID:/0000-0002-0406-6918/work/218183599ORCID:/0000-0001-5792-7630/work/218184137https://hdl.handle.net/1885/733811763This work assesses the thermal stability of n-type Epiwafers after a boron diffusion based on the carrier lifetime measurements and photoluminescence images. The Epiwafers show a high bulk quality (iVoc > 735-745 mV) in their initial state after passivation with PECVD SiNx:H films. After a customized thermal budget for boron diffusion, the Epiwafers did not show any significant degradation, suggesting their high thermal stability. In contrast, some n-type Czochralski (nCz) silicon control samples degraded significantly (∆i Voc = -30 mV) due to the formation of ring defects during boron diffusion.This work has been funded by NexWafe. RB would like to acknowledge Christian Samundsett for help in sample processing. This work is supported by the Australian Renewable Energy Agency (ARENA) through the Australian Center for Advanced Photovoltaics (ACAP).6enBoron-DiffusionEpiwafersThermal-Stability2026-01-2010.52825/siliconpv.v3i.2690