Kucheyev, SergeiToth, MPhillips, Matthew RWilliams, James SJagadish, ChennupatiLi, Gang2010-09-222010-12-202010-09-222010-12-20Journal of Applied Physics 91.9 (2002): 5867-740021-89791089-755http://hdl.handle.net/10440/1109http://digitalcollections.anu.edu.au/handle/10440/1109The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed.8 pageshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2002 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)gallium compoundsIII-V semiconductorswide band gap semiconductorshydrogencarbonnitrogenoxygensiliconcathodoluminescenceion implantationnonradiative transitionsimpurity-defect interactionsspectral line shiftboron2002-05-0110.1063/1.14676052015-12-11