Wen, XiaomingDavis, Jeffrey A.Van Dao, LapHannaford, PeterColeman, Victoria AJagadish, C.Koike, K.Sasa, S.Inoue, M.Yano, M.Tan, Hark Hoe2015-12-142015-12-140003-6951http://hdl.handle.net/1885/95010The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO∕ZnMgOmultiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.The authors gratefully acknowledge the Australian Research Council for financial support and Swinburne University of Technology for Strategic Initiative funding. One of the authors X.W. acknowledges partial financial support of the Chinese National Natural Science Foundation 10364004 and the Yunnan Natural Science Foundation 2003E0013M.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2745264Keywords: Activation energy; Agglomeration; Ion implantation; Photoluminescence; Point defects; Rapid thermal annealing; Implantation dose; Lattice damage; Nonradiative recombination; Photoluminescence efficiency; Semiconductor quantum wells2007-06-0110.1063/1.27452642019-11-25