Cuevas, AndresTan, Jason2015-12-070927-0248http://hdl.handle.net/1885/28157Theoretical modelling of suns-Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I-V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.Keywords: Computer modelling; Diffusivities; Extreme conditions; I-V characteristic curves; I-V characteristics; Ideality factors; Illumination intensities; Non-idealities; Surface recombinations; Theoretical modelling; Photovoltaic cells; Silicon solar cells; Sola I-V characteristics; Solar cell modelling; Suns-Voc measurements200910.1016/j.solmat.2008.11.0412016-02-24