Yin, ChunmingRancic, MilosStavrias, Nikolasde Boo, Gabriele G.McCallum, Jeffrey C.Sellars, MatthewRogge, Sven2015-12-13December 19781467330466http://hdl.handle.net/1885/82958We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.Keywords: Charge detectors; Charge sensing; Electrical detection; Narrow-line width; Optical addressing; Photon energy; Resonant ionization; Microelectronics; Photoionization; Erbium201210.1109/COMMAD.2012.64724282016-02-24