Voronkov, V. V.Falster, R.Batunina, A. V.MacDonald, D.Bothe, K.Schmidt, J.2025-12-312025-12-311876-6102ORCID:/0000-0001-5792-7630/work/162446483https://hdl.handle.net/1885/733798285The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.5enBoronElectron lifetimeOxygenSilicon201110.1016/j.egypro.2011.01.00879952748274