Lei, W.Jagadish, C.Tan, Hark Hoe2015-09-182015-09-180003-6951http://hdl.handle.net/1885/15569Graded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of the composition and morphology change, photoluminescence from the InAsSb nanostructures shows different polarization and temperature characteristics. This work demonstrates a technologically important technique—graded growth, to control the growth and the resultant physical properties of self-assembled semiconductor nanostructures.Financial support from Australian Research Council is gratefully acknowledged.5 pageshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4789513Keywords: Growth techniques; Mole fraction; Morphology changes; Self-assembled; Semiconductor nanostructures; Shape change; Temperature characteristic; Indium antimonides; Morphology; Optical properties; Semiconductor growth; Nanostructures2013-01-2510.1063/1.47895132016-02-24