Wang, R. P.Choi, Duk-YongRode, A. V.Madden, S. J.Luther-Davies, B.2015-12-222015-12-220021-8979http://hdl.handle.net/1885/95161We have measured and analyzed x-ray photoelectron spectra(XPS) of as-grown and annealedGe33As12Se55films compared with bulk material. We found that the as-grown film contains a large number of separated Se clusters which can coalesce with As and Ge after annealing at high temperatures. In addition, both the Ge and As 3dspectra show the presence of oxides. While the Geoxidation increases with an increasing annealing temperature, As oxidation is almost unaffected by annealing. The difference could be due to their different electro-negativities. Our results suggest that, while thermal annealing is effective to move the film toward the bond structure of bulk glass, the simultaneous surface oxidation must be suppressed in order to achieve high quality films.This research was supported by Australian Research Council through its Centers of Excellence, Discovery and Federation Fellow Programs.http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2737785Keywords: Annealing; Arsenic; Germanium; Glass; Oxidation; X ray photoelectron spectroscopy; Bond structure; Bulk glass; Surface oxidation; Selenium2007-06-0710.1063/1.27377852016-02-24