Garud, SiddharthaGampa, NikhilAllen, Thomas GKotipalli, RatanFlandre, DenisBatuk, MariaHadermann, JokeMeuris, MarcPoortmans, JefSmets, ArnoVermang, Bart2024-01-151862-6300http://hdl.handle.net/1885/311464This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).application/pdfen-AU© 2018 The authors201810.1002/pssa.2017008262022-09-25