Parkinson, PatrickWang, HaoGao, QiangJagadish, ChennupatiTan, Hark Hoe2015-12-13May 6-11 29781467318396http://hdl.handle.net/1885/71322The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.Keywords: Carrier lifetime measurements; Critical parameter; GaAs; Optoelectronic applications; Photocarrier lifetimes; Picosecond resolution; Picoseconds; Semiconductor nanowire; Gallium arsenide; Lasers; Semiconducting gallium; Semiconductor lasers; Nanowires20122016-02-24