Stewart Sears, KalistaBuda, ManuelaWong-Leung, JenniferJagadish, ChennupatiTan, Hark Hoe2015-12-07July 3-7 21424404533http://hdl.handle.net/1885/27276This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.Keywords: Chemical vapor deposition; Ion beam assisted deposition; Lasers; Metallizing; Metals; Nanoscience; Nanotechnology; Optical waveguides; Organic chemicals; Organic compounds; Organometallics; Quantum electronics; Cavity lengths; Diode lasers; Inas/gaas quan InAs/GaAs; Laser; MOCVD; Quantum dots200610.1109/ICONN.2006.3406642015-12-07