Williams, JamesWong-Leung, Jennifer2015-12-109783540887881http://hdl.handle.net/1885/52405In silicon, defects that are normally observed following ion implantation and annealing are interstitial based, that is they arise from the agglomeration of interstitials that are produced during ion irradiation. Vacancies that are produced in equal numbe201010.1007/978-3-540-88789-8_52015-12-09