Deenapanray, PrakashAuret, Francois DMyburg, G2015-12-130168-583Xhttp://hdl.handle.net/1885/93674Deep level transient spectroscopy was used in conjunction with current-voltage and capacitance-voltage measurements to characterize sputter etching-induced defects in n-Si as a function of Ar-plasma pressure. The reverse current, at a bias of 1 V, of Pd Schottky barrier diodes fabricated on the etched samples increased monotonically with decreasing plasma pressure and their barrier heights followed the opposite trend. Sputter etching created six prominent electron traps, including the VO and VP centers and V2/0. The non-detection of V2=/- is attributed to the presence of stress fields in the etched samples. A secondary defect S1 with an energy level at Ec-0.219 eV is introduced during annealing at the expense of trap P4, which has similar electronic and annealing properties as the complex vacancy cluster EAr201 (Ec-0.201 eV), created in Ar-ion bombarded n-Si.Keywords: Sputter etching; Annealing; Argon; Capacitance measurement; Crystal defects; Current voltage characteristics; Deep level transient spectroscopy; Electron traps; Etching; Ion bombardment; Schottky barrier diodes; Semiconductor device manufacture; Semicondu Annealing; Deep level transient spectroscopy; Defects; Sputter etching19992015-12-12