Kerr, MarkCuevas, Andres2015-12-100268-1242http://hdl.handle.net/1885/69975Bulk and surface processes determine the recombination rate in crystalline silicon wafers. In this paper we report effective lifetime measurements for a variety of commercially available float-zone silicon wafers that have been carefully passivated usingKeywords: Carrier concentration; Crystalline materials; High temperature effects; Optimization; Semiconductor doping; Silica; Surface phenomena; Thermooxidation; Surface recombinations; Silicon wafers200210.1088/0268-1242/17/1/3062015-12-10