Johnson, BrettCaradonna, P.Pyke, D. J.McCallum, Jeffrey C.Gortmaker, P.2015-12-100040-6090http://hdl.handle.net/1885/61277Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous Si (a-Si) and Ge (a-Ge) are presented. During SPE, H diffuses into surface amorphous layers from the surface and segregates at the crystalline-amorphous interface. Some of the H crosses the interface and diffuses into the crystalline material where it either leaves the sample or is trapped by defects. H segregation at concentrations up to 2.3 × 1020 H/cm3 is observed in buried pha-Si layers with the SPE rate decreasing by up to 20%. H also results in a reduction of dopant-enhanced SPE rates and is used to explain the asymmetry effects between the SPE velocity profile and the dopant concentration profile observed with shallow dopant implants. Conversely, H diffusion is enhanced by dopants in a-Si. These studies suggest that H diffusion and SPE may be mediated by the same defect. The extent of H in-diffusion into a-Ge surface layers during SPE is about one order of magnitude less that that observed for a-Si layers. This is thought to be due to the lack of a stable surface oxide on a-Ge. However, a considerably greater retarding effect on the SPE rate in a-Ge of up to 70% is observed. A single unifying model is applied to both dopant-enhanced SPE and H diffusion processes.Keywords: a-Si layers; Amorphous Si; Crystalline-amorphous interfaces; Device modeling; Dopant concentrations; Effect of hydrogen; Ge surfaces; H diffusion; Hydrogen diffusion; In-diffusion; Order of magnitude; Retarding effect; Si layer; Solid phase epitaxy; Stabl Device modeling; Hydrogen diffusion; Solid phase epitaxy201010.1016/j.tsf.2009.09.1452016-02-24