Ridgway, M. C.Elliman, R. G.Petravic, M.Thornton, R. P.Williams, J. S.2026-01-032026-01-030884-2914ORCID:/0000-0002-1304-4219/work/167651084https://hdl.handle.net/1885/733803425The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while —40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.We are grateful to R. Loccisano for assistance in preparing the samples and P. Bond and D. Duckworth for assistance in operating the ion implanter. The financial support of the Australian Research Council and the Australian Special Research Centres Scheme is acknowledged.5en199110.1557/JMR.1991.10350026152534