Li, Xiao-LeiLi, NDemiguel, SZheng, XCampbell, J CJagadish, ChennupatiTan, Hark Hoe2015-12-132015-12-131041-1135http://hdl.handle.net/1885/77548A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.Keywords: Electronic structure; Heterojunctions; Light absorption; Microwave devices; Photocurrents; Photodetectors; Quantum efficiency; Semiconducting indium gallium arsenide; Semiconductor doping; Absorber photodiode; Graded doping injection regions; High power p200410.1109/LPT.2004.8345632016-02-24