Allen, Thomas G.Ernst, MarcoSamundsett, ChristianCuevas, Andres2026-07-012026-07-019781479979448https://hdl.handle.net/1885/733812232Gallium oxide (Ga2O3) deposited by plasma enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1×1011 cm-2 eV-1 at midgap. The passivation, as determined by the injection dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminium oxide (Al2O3). In addition, Ga2O3 is used as a gallium source in a laser doping process, resulting in an efficiency of 19.2% and an open circuit voltage of 658 mV in a partial rear contact p-type cell design. As such, we demonstrate that Ga2O3 is comparable to Al2O3 in terms of performance and utility, with potential material advantages over Al2O3.Funding from The Australian Renewable Energy Agency (ARENA) is gratefully acknowledged.6enPublisher Copyright: © 2015 IEEE.Al2O3gallium oxidelaser dopingsurface passivation2015-12-1410.1109/PVSC.2015.735640584961620676