Parkinson, PatrickLee, Yu-Heng (Jaret)Fu, LanBreuer, SteffanJagadish, ChennupatiTan, Hark Hoe2015-12-131530-6984http://hdl.handle.net/1885/72447Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel applicatiKeywords: Experimental techniques; GaAs; Optical beam induced currents; Photovoltaic; Photovoltaic parameters; Semiconductor nanowire; Submicrometer resolution; Three-dimensional reconstruction; Gallium arsenide; Nanowires; Photocurrents; Photons; Semiconducting ga GaAs; nanowire; photocurrent mapping; photovoltaic; two-photon optical beam induced current (TOBIC)201310.1021/nl304170q2016-02-24