Jolley, GFu, LanJagadish, C.Tan, Hark Hoe2015-12-152015-12-150003-6951http://hdl.handle.net/1885/95025We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW.The Australian Research Council is gratefully acknowledged for the financial support.http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2802559Keywords: Metallorganic chemical vapor deposition; Photodetectors; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Atmospheric window; Barrier composition; Spectral response; Semiconductor quantum wellsInfluence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors2007-10-2510.1063/1.28025592016-02-24