Jolley, GregLu, Hao FengFu, LanRao Tatavarti, SudersenaJagadish, ChennupatiTan, Hark Hoe2015-12-10June 19-24http://hdl.handle.net/1885/60347An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.Keywords: Current properties; GaAs; GaAs solar cells; InGaAs quantum dots; Physical process; Quantum dot solar cells; Single junction; Spectral response characteristics; Temperature dependent; Gallium arsenide; Open circuit voltage; Photovoltaic effects; SemiconducThe influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties201110.1109/PVSC.2011.61860062016-02-24