Fu, JingShen, XiangNie, QiuhuaWang, GuoxiangWu, LiangcaiDai, ShixunXu, TiefengWang, Rongping2015-12-100169-4332http://hdl.handle.net/1885/69689Mg-doped Ge2Sb2Te5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent MgSb and MgTe bonds contribute to the enhanced thermal stability in Mg-doped GST films.Keywords: Crystalline phase; Crystallization behavior; Crystallization temperature; Electrical resistances; Hexagonal close-packed; Memory applications; Mg concentrations; Mg-doping; One-step crystallization; Phase changes; X ray photoelectron spectra; XRD; Activat Electrical properties; Phase transformation; Thin films; XRD201310.1016/j.apsusc.2012.09.1812016-02-24