Lin, Cheng LuYang, Gen QingFang, Zi WeiLi, Xiao QinZou, Shi ChangGyulai, J.Elliman, R. G.2026-01-032026-01-031001-6511ORCID:/0000-0002-1304-4219/work/167651071https://hdl.handle.net/1885/733803366This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.8endamage enhancementmolecular ion implantationsilicon199343949171735