Tajima, MichioIwai, TakaakiToyota, HiroyukiBinetti, SimonaMacDonald, Daniel2015-12-101882-0786http://hdl.handle.net/1885/58853A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.Keywords: DA pair recombination; Density curves; Density distributions; Donor-acceptor pairs; Fine structures; Ionization energies; P donors; Photon energy; Spectral structure; Transition energy; Luminescence201010.1143/APEX.3.0713012016-02-24